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V80100PW
www.vishay.com
Vishay General Semiconductor
Revision: 20-Dec-13
1
Document Number: 89183
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF
= 0.43 V at I
F
= 10 A
FEATURES
? Trench MOS Schottky technology
? Low forward voltage drop, low power losses
? High efficiency operation
? Solder dip 275 °C max. 10 s, per JESD 22-B106
? Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency converters, switching power
supplies, freewheeling diodes, OR-ing diode, DC/DC
converters and reverse battery protection.
MECHANICAL DATA
Case: TO-3PW?
Molding compound meets UL 94
V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Terminals:
Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102?
M3 suffix meets JESD 201 class 1A whisker test
Polarity:
As marked
Mounting Torque:
10 in-lbs maximum
?
?
?
PRIMARY CHARACTERISTICS
IF(AV)
2 x 40 A
VRRM
100 V
IFSM
450 A
EAS
at L = 180 mH 700 mJ
VF at IF
= 40 A 0.64 V
TJ
max. 150 °C
Package TO-3PW
Diode variations Dual common cathode
TO-3PW
TMBS?
PIN 2
CASE
PIN 1
PIN 3
MAXIMUM RATINGS (TA
= 25 °C unless otherwise noted)
PARAMETER SYMBOL V80100PW UNIT
Maximum repetitive peak reverse voltage VRRM
100 V
Maximum average forward rectified current (fig. 1)
per device
I
per diode 40F(AV)
80
A
Peak forward surge current 8.3 ms single half sine-wave?
superimposed on rated load per diode
IFSM
450 A
Non-repetitive avalanche energy at TJ
= 25 °C, L = 180 mH per diode E
AS
700 mJ
Peak repetitive reverse current at tp
= 2 μs, 1 kHz,
?
TJ
= 38 °C ± 2 °C per diode
IRRM
1.0 A
Voltage rate of change (rated VR) dV/dt 10 000 V/μs
Operating junction and storage temperature range TJ, TSTG
-40 to +150 °C
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相关代理商/技术参数
V80100PW-M3-4W 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Dual High-Voltage Trench MOS Barrier Schottky Rectifier
V80100PW-M3R/4W 功能描述:DIODE ARRAY SCHOTTKY TO3PW 制造商:vishay semiconductor diodes division 系列:汽车级，AEC-Q101 零件状态:最後搶購 二极管配置:1 对共阴极 二极管类型:肖特基 电压 - DC 反向（Vr）（最大值）:100V 电流 - 平均整流（Io）（每二极管）:40A 不同 If 时的电压 - 正向（Vf:840mV @ 40A 速度:快速恢复 = 200mA（Io） 不同?Vr 时的电流 - 反向漏电流:1mA @ 100V 工作温度 - 结:-40°C ~ 150°C 安装类型:通孔 封装/外壳:TO-3P-3 整包 供应商器件封装:TO-3PW 标准包装:50
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